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| (R) 1N 5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Power Dissipation* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Ta = 25 C Ta = 25C DO 35 (Glass) Value 70 15 430 - 65 to 200 - 65 to 200 230 Unit V mA mW C C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 400 Unit C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * * Tamb = 25C Tamb = 25C Tamb = 25C IR * * Tamb = 25C Test Conditions IR = 10A IF = 1mA IF = 15mA VR = 50V Min. 70 0.41 1 0.2 A Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tamb = 25C Tamb = 25C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * On infinite heatsink with 4mm lead length ** Pulse test: tp 300s < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. August 1999 Ed: 1A 1/3 1N 5711 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typical values). Figure 3. Reverse current versus ambient temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 2/3 1N 5711 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS B note 1 E A B E note 1 / OC REF. Millimeters Min. Max. Inches Min. Max. A B / OD note 2 OD / 3.05 1.53 12.7 0.458 4.50 2.00 0.558 0.120 0.060 0.500 0.018 0.177 0.079 0.022 C D Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 3/3 |
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